CPZ18_10

PROCESS Zener Diode CPZ18 0.5 Watt Zener Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 13.8 x 13.8 MILS 7.5 MILS 7.5 x 7.5 MILS Al - 13,000Å Au - 14,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 61,141 PRINCIPAL DEVICE TYPES CMPZ5221B THRU CMPZ5234B BACKSIDE CATHODE R6 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPZ18 Typical Electrical Characteristics IZ, Reverse Current (µA) R6 (22-March 2010) w w w. c e n t r a l s e m i . c o m