CQ202-4B-2

CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 4.0 AMP TRIAC 200 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ202-4B-2 series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER TO-202-2 THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL VDRM RMS On-State Current (TC=80°C) IT(RMS) Peak Non-Repetitive Surge Current (t=8.3ms) ITSM Peak Non-Repetitive Surge Current (t=10ms) ITSM I2t Value for Fusing (t=10ms) I 2t PGM PG (AV) IGM Tstg TJ ΘJA ΘJC Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance Peak Repetitive Off-State Voltage CQ202 -4B-2 200 CQ202 -4D-2 400 4.0 40 35 6.0 3.0 0.2 1.2 -40 to +150 -40 to +125 60 7.5 CQ202 -4M-2 600 CQ202 -4N-2 UNITS 800 V A A A A2s W W A °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VGT VTM dv/dt Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III VD=12V, QUAD IV RGK=1KΩ VD=12V, QUAD I, II, III VD=12V, QUAD IV ITM=6.0A, tp=380µs VD=2 /3 VDRM, TC=125°C 5.0 TYP MAX 10 200 UNITS µA µA mA mA mA V V V V/µs 6.6 35 5.2 1.1 2.0 1.25 20 50 25 1.5 2.5 1.60 R1 (27-June 2005) Central TM Semiconductor Corp. CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2 4.0 AMP TRIAC 200 THRU 800 VOLTS TO-202-2 THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) GATE NOTE: TAB IS COMMON TO PIN 2 (MT2) MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.057 0.061 1.45 1.55 0.019 0.021 0.49 0.52 0.175 0.180 4.44 4.56 0.376 0.388 9.55 9.85 0.350 8.89 0.070 1.78 0.035 0.043 0.90 1.10 0.023 0.028 0.59 0.71 0.098 0.102 2.49 2.59 0.280 0.301 7.12 7.65 0.406 0.425 10.30 10.80 0.024 0.059 0.60 1.50 TO-202-2 Thyristor (REV: R0) R1 (27-June 2005)