CQ220-12M3SL

CQ220-12M3 SILICON THREE-QUADRANT TRIAC 12 AMP, 600 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ220-12M3 is an epoxy molded silicon TRIAC designed for full wave AC control applications featuring gate triggering in three quadrants. MARKING: FULL PART NUMBER TO-220 CASE FEATURES: • 3Q technology for noise immunity • High commutation capability • Triggering in three quadrants only APPLICATIONS: • Motor controls • General purpose AC switching • High power inductive load switching MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM, VRRM Peak One Cycle Surge Voltage, t=10ms (TJ=125°C) VDSM RMS On-State Current (TC=90°C) Peak One Cycle Surge Current, t=16.7ms UNITS V 700 V 12 A 100 A I2t 78 A2s PG(AV) IGM 1.0 W 4.0 A di/dt 50 A/μs -40 to +125 °C Storage Temperature TJ Tstg -40 to +150 °C Thermal Resistance ΘJA 60 °C/W Thermal Resistance ΘJC 1.4 °C/W MAX 5.0 UNITS μA 50 mA mA I2t Value for Fusing, t=10ms Average Gate Power Dissipation (TJ=125°C) Peak Gate Current, tp=20μs (TJ=125°C) Critical Rate of Rise of On-State Current Repetitive, f=120Hz (TJ=125°C) Operating Junction Temperature IT(RMS) ITSM 600 ELECTRICAL SYMBOL IDRM, IRRM IGT CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN TYP VDRM, VRRM=600V VD=12V, RL=30Ω, QUAD I, II, III IH VGT IT=500mA 50 1.3 V VTM VD=12V, RL=30Ω, QUAD I, II, III ITM=17A, tp=380μs 1.55 V dv/dt VD=⅔VDRM, RGK= 500 V/μs ∞, TJ=125°C 1.39 R1 (7-October 2015) CQ220-12M3 SILICON THREE-QUADRANT TRIAC 12 AMP, 600 VOLT TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER R1 (7-October 2015) w w w. c e n t r a l s e m i . c o m CQ220-12M3 SILICON THREE-QUADRANT TRIAC 12 AMP, 600 VOLT TYPICAL ELECTRICAL CHARACTERISTICS R1 (7-October 2015) w w w. c e n t r a l s e m i . c o m CQ220-12M3 SILICON THREE-QUADRANT TRIAC 12 AMP, 600 VOLT TYPICAL ELECTRICAL CHARACTERISTICS R1 (7-October 2015) w w w. c e n t r a l s e m i . c o m