CQ220-25N

CQ220-25N

  • 厂商:

    CENTRAL(中环)

  • 封装:

    TO-220-3

  • 描述:

    TRIAC25ATO-220

  • 详情介绍
  • 数据手册
  • 价格&库存
CQ220-25N 数据手册
CQ220-25B CQ220-25D CQ220-25M CQ220-25N 25 AMP TRIAC 200 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ220-25B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge (t=8.3ms) I2t Value for Fusing (t=8.3ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Peak Gate Voltage (tp=10µs) Critical Rate of Rise of On-State Current Repetitive (f=60Hz) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance di/dt Tstg TJ ΘJA ΘJC 10 -40 to +150 -40 to +125 60 1.7 A/µs °C °C °C/W °C/W VDRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM CQ220 -25B 200 CQ220 -25D 400 25 150 94 40 1.0 10 16 CQ220 CQ220 -25M -25N 600 800 UNITS V A A A2s W W A V ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VGT VTM dv/dt Rated VDRM Rated VDRM, TC=125°C VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV IT=100mA VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV ITM=35A, tp=380µs VD=2 /3 VDRM, RGK=∞, TC=125°C 6.0 TYP MAX 10 2.0 UNITS µA mA mA mA mA V V V V/µs 11.1 28.2 18.4 1.03 1.74 30 60 50 1.50 2.50 1.80 R2 (24-September 2004) Central TM Semiconductor Corp. CQ220-25B CQ220-25D CQ220-25M CQ220-25N 25 AMP TRIAC 200 THRU 800 VOLTS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) GATE NOTE: TAB IS COMMON TO PIN 2 (MT2) MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F (DIA) G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.170 0.190 4.31 4.82 0.045 0.055 1.15 1.39 0.013 0.026 0.33 0.65 0.083 0.107 2.10 2.72 0.394 0.417 10.01 10.60 0.140 0.157 3.55 4.00 0.100 0.118 2.54 3.00 0.230 0.270 5.85 6.85 0.560 0.625 14.23 15.87 0.250 6.35 0.025 0.038 0.64 0.96 0.500 0.579 12.70 14.70 0.090 0.110 2.29 2.79 TO-220 (REV: R2) R2 (24-September 2004)
CQ220-25N
1. 物料型号: - CQ220-25B - CQ220-25D - CQ220-25M - CQ220-25N

2. 器件简介: - 该系列型号是Central Semiconductor Corp.生产的环氧模塑硅可控硅,设计用于全波AC控制应用,具有在四个象限内触发门控的特性。

3. 引脚分配: - MT1:引脚1 - MT2:引脚2(公共端) - GATE:引脚3(门极)

4. 参数特性: - 最大重复关断电压(VDRM):200V至800V不等 - RMS导通电流(IT(RMS)):25A - 峰值单周期浪涌电流(ITSM):150A - I2t值(用于熔断,t=8.3ms):94A²s - 峰值门极功率(PGM,tp=10µs):40W - 平均门极功率耗散(PG(AV)):1.0W - 峰值门极电流(IGM,tp=10µs):10A - 峰值门极电压(VGM,tp=10µs):16V - 关键速率上升的导通电流(di/dt,f=60Hz):10A/µs - 存储温度(Tstg):-40至+150°C - 结温(TJ):-40至+125°C - 热阻(ΘJA):60°C/W - 热阻(ΘJC):1.7°C/W

5. 功能详解应用信息: - 这些器件适用于全波AC控制应用,可以在四个象限内进行门控触发,适用于需要控制交流电流的场合。

6. 封装信息: - 封装类型为TO-220,具体尺寸和机械轮廓在文档中有详细描述。
CQ220-25N 价格&库存

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