CQ220-8M3SL

CQ220-8M3 SILICON THREE-QUADRANT TRIAC 8.0 AMP, 600 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ220-8M3 is an epoxy molded silicon TRIAC designed for full wave AC control applications featuring gate triggering in three quadrants. MARKING: FULL PART NUMBER TO-220 CASE FEATURES: • 3Q technology for noise immunity • High commutation capability • Triggering in three quadrants only APPLICATIONS: • Motor controls • General purpose AC switching • High power inductive load switching MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM, VRRM RMS On-State Current (TC=110°C) IT(RMS) 600 UNITS V 8.0 A Peak One Cycle Surge Current, t=10ms ITSM I2t 70 A 32 A2s PG(AV) IGM 1.0 W 4.0 A di/dt 50 A/μs -40 to +125 °C Storage Temperature TJ Tstg -40 to +150 °C Thermal Resistance ΘJA 60 °C/W Thermal Resistance ΘJC 1.6 °C/W MAX 5.0 UNITS μA VD=12V, RL=30Ω, QUAD I, II, III IT=100mA 50 mA 50 mA 1.3 V VTM VD=12V, RL=30Ω, QUAD I, II, III ITM=11A, tp=380μs dv/dt VD=⅔VDRM, RGK= I2t Value for Fusing, t=10ms Average Gate Power Dissipation (TJ=125°C) Peak Gate Current, tp=20μs (TJ=125°C) Critical Rate of Rise of On-State Current Repetitive, f=100Hz (TJ=125°C) Operating Junction Temperature ELECTRICAL SYMBOL IDRM, IRRM IGT IH VGT CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN TYP VDRM, VRRM=600V ∞, TJ=125°C 1.24 1.55 V 1000 V/μs R1 (7-October 2015) CQ220-8M3 SILICON THREE-QUADRANT TRIAC 8.0 AMP, 600 VOLT TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER R1 (7-October 2015) w w w. c e n t r a l s e m i . c o m CQ220-8M3 SILICON THREE-QUADRANT TRIAC 8.0 AMP, 600 VOLT TYPICAL ELECTRICAL CHARACTERISTICS R1 (7-October 2015) w w w. c e n t r a l s e m i . c o m CQ220-8M3 SILICON THREE-QUADRANT TRIAC 8.0 AMP, 600 VOLT TYPICAL ELECTRICAL CHARACTERISTICS R1 (7-October 2015) w w w. c e n t r a l s e m i . c o m