CQ223-2M

CQ223-2M

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CQ223-2M - 2.0 AMP TRIAC 600 THRU 800 VOLTS - Central Semiconductor Corp

  • 数据手册
  • 价格&库存
CQ223-2M 数据手册
CQ223-2M CQ223-2N 2.0 AMP TRIAC 600 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=80°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Storage Temperature Junction Temperature Thermal Resistance VDRM IT(RMS) ITSM I 2t PGM PG (AV) IGM Tstg TJ ΘJA CQ223 -2M 600 2.0 20 2.0 3.0 0.2 1.2 -40 to +150 -40 to +125 62.5 CQ223 -2N 800 UNITS V A A A2s W W A °C °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VTM VTM dv/dt Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III VD=12V, QUAD IV RGK=1KΩ VD=12V, QUAD I, II, III, IV ITM=2.0A, tp=380µs ITM=3.0A, tp=380µs VD=2 /3 VDRM, TC=125°C TYP MAX 5.0 200 UNITS µA µA mA mA mA V V V V/µs 1.35 3.75 1.2 1.1 1.50 1.7 2.5 5.00 8.00 5.0 1.8 1.75 2.0 R0 (11-May 2004) Central TM Semiconductor Corp. CQ223-2M CQ223-2N 2.0 AMP TRIAC 600 THRU 800 VOLTS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) GATE 4) MT2 MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0° 10° 0° 10° 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15° 15° 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3) R0 (11-May 2004)
CQ223-2M 价格&库存

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