CQ223-2N

CQ223-2M CQ223-2N SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM RMS On-State Current (TC=80°C) IT(RMS) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Operating Junction Temperature Storage Temperature Thermal Resistance ITSM I2t PGM PG (AV) IGM TJ Tstg ΘJA CQ223-2M 600 CQ223-2N 800 2.0 10 0.5 3.0 0.2 1.2 UNITS V A A A2s W W A °C °C °C/W -40 to +125 -40 to +150 62.5 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VTM VTM dv/dt Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III VD=12V, QUAD IV RGK=1KΩ VD=12V, QUAD I, II, III, IV ITM=2.0A, tp=380μs ITM=3.0A, tp=380μs VD=2/3 VDRM, TC=125°C 2.5 TYP MAX 5.0 200 UNITS μA μA mA mA mA V V V V/μs 1.35 3.75 1.2 1.1 1.50 1.7 5.00 8.00 5.0 1.8 1.75 2.0 R1 (24-June 2010) CQ223-2M CQ223-2N SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) Gate 4) MT2 MARKING: FULL PART NUMBER R1 (24-June 2010) w w w. c e n t r a l s e m i . c o m