CQ39MS

CQ39BS CQ39DS CQ39MS CQ39NS TRIAC 4.0 AMP, 200 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ39BS series type is a hermetically sealed silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=80°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance VDRM IT(RMS) ITSM I 2t PGM PG (AV) IGM Tstg TJ ΘJA ΘJC CQ39BS CQ39DS CQ39MS CQ39NS 200 400 4.0 35 2.0 3.0 0.2 1.2 -40 to +150 -40 to +125 160 9.0 600 800 UNITS V A A A2 s W W A °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VTM dv/dt Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III VD=12V, QUAD IV RGK=1KΩ VD=12V, QUAD I, II, III, IV ITM=6.0A, tp=380µs VD=2 /3 VDRM, TC=125°C 11 TYP MAX 10 200 UNITS µA µA mA mA mA V V V/µs 2.5 5.5 1.6 5.0 9.0 5.0 2.0 1.75 R1 (18-August 2004) Central TM Semiconductor Corp. CQ39BS CQ39DS CQ39MS CQ39NS TRIAC 4.0 AMP, 200 THRU 800 VOLTS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) GATE 3) MT2 MARKING CODE: FULL PART NUMBER DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A (DIA) 0.335 0.370 8.51 9.40 B (DIA) 0.315 0.335 8.00 8.51 C 0.040 1.02 D 0.240 0.260 6.10 6.60 E 0.500 12.70 F (DIA) 0.016 0.021 0.41 0.53 G (DIA) 0.200 5.08 H 0.100 2.54 I 0.028 0.034 0.71 0.86 J 0.029 0.045 0.74 1.14 TO-39 (REV: R1) R1 (18-August 2004)