CQ89-2M_10

CQ89-2M CQ89-2N SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ89-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=50°C) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Peak Gate Voltage, tp=10μs Operating Junction Temperature Storage Temperature Thermal Resistance Thermal Resistance SYMBOL VDRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM TJ Tstg ΘJA ΘJC CQ89-2M CQ89-2N 600 800 2.0 20 2.0 3.0 0.2 1.2 8.0 -40 to +125 -40 to +150 180 90 UNITS V A A A2s W W A V °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM Rated VDRM, RGK=1KΩ IDRM Rated VDRM, RGK=1KΩ, TC=125°C IGT VD=12V, QUAD I, II, III IGT VD=12V, QUAD IV IH RGK=1KΩ VGT VD=12V, QUAD I, II, III, IV VTM ITM=2.0A, tp=380μs VTM ITM=3.0A, tp=380μs 2.5 dv/dt VD=2 /3 VDRM, TC=125°C TYP 1.35 3.75 1.2 1.1 1.50 1.7 MAX 5.0 200 5.00 8.00 5.0 1.8 1.75 2.0 UNITS μA μA mA mA mA V V V V/μs R1 (12-February 2010) CQ89-2M CQ89-2N SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Gate 2) MT2 3) MT1 MARKING: FULL PART NUMBER R1 (12-February 2010) w w w. c e n t r a l s e m i . c o m