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Y AR IN CQ89D
CQ89M CQ89N
Central
TM
Semiconductor Corp.
1.0 AMP TRIAC 400 THRU 800 VOLTS
DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ89D series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TC=25°C) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=80°C) Peak One Cycle Surge (tp=10 ms) Peak Gate Current Average Gate Power Dissipation Storage Temperature Junction Temperature Thermal Reistance VDRM IT (RMS) ITSM IGM PG (AV) Tstg TJ ΘJC CQ89D 400 CQ89M 600 1.0 10 1.0 CQ89N 800 UNITS V A A A W °C °C °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IH VGT VGT VTM dv/dt VD=Rated VDRM VD=Rated VDRM, TC=125°C VD=12V, QUAD I, II, III, IV VD=12V VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV IT=1.0A VD=2/3 VDRM, TC=125°C 5.0
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0.1 -40 to +150 -40 to +125 10 TYP
MAX 10 200 10 10 2.0 2.5 2.0
UNITS µA µA mA mA V V V V/µs
R4 (10-June 2004)
Central
TM
Semiconductor Corp.
P
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INA
RY
CQ89D CQ89M CQ89N
1.0 AMP TRIAC 400 THRU 800 VOLTS SOT-89 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) GATE 2) MT2 3) MT1 MARKING CODE: FULL PART NUMBER
DIMENSIONS INCHES MILLIMETERS MAX MIN MAX SYMBOL MIN A 0.055 0.067 1.40 1.70 B 4° 4° C 0.014 0.018 0.35 0.46 D 0.173 0.185 4.40 4.70 E 0.064 0.074 1.62 1.87 F 0.146 0.177 3.70 4.50 G 0.090 0.106 2.29 2.70 H 0.028 0.051 0.70 1.30 J 0.014 0.019 0.36 0.48 K 0.017 0.023 0.44 0.58 L 0.059 1.50 M 0.118 3.00 SOT-89 (REV: R4)
R4 (10-June 2004)
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