CQD-4M

CQD-4M CQD-4N 4.0 AMP TRIAC 600 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CQD-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=80°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Storage Temperature Junction Temperature VDRM IT(RMS) ITSM I 2t PGM PG (AV) IGM Tstg TJ CQD -4M 600 4.0 40 2.4 3.0 0.2 1.2 -40 to +150 -40 to +125 CQD -4N 800 UNITS V A A A2s W W A °C °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VTM dv/dt Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III VD=12V, QUAD IV RGK=1KΩ VD=12V, QUAD I, II, III, IV ITM=6.0A, tp=380µs VD=2 /3 VDRM, TC=125°C 11 TYP MAX 10 200 UNITS µA µA mA mA mA V V V/µs 2.5 5.4 1.6 0.95 1.25 5.0 9.0 5.0 1.75 1.75 R0 (20-May 2004) Central TM Semiconductor Corp. CQD-4M CQD-4N 4.0 AMP TRIAC 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) GATE 4) MT2 MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H J K L M N DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.086 0.094 2.18 2.39 0.018 0.032 0.46 0.81 0.035 0.050 0.89 1.27 0.205 0.228 5.21 5.79 0.047 0.055 1.20 1.40 0.018 0.024 0.45 0.60 0.250 0.268 6.35 6.81 0.205 0.215 5.20 5.46 0.235 0.245 5.97 6.22 0.100 0.108 2.55 2.74 0.025 0.040 0.64 1.02 0.025 0.035 0.64 0.89 0.090 2.28 DPAK THYRISTOR (REV: R0) R0 (20-May 2004)