CQD-4M_10

CQD-4M CQD-4N SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQD-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=80°C) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Operating Junction Temperature Storage Temperature SYMBOL VDRM IT(RMS) ITSM I2t PGM PG (AV) IGM TJ Tstg CQD-4M 600 4.0 40 2.4 3.0 0.2 1.2 CQD-4N 800 UNITS V A A A2s W W A °C °C -40 to +125 -40 to +150 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VTM dv/dt Rated VDRM, RGK=1KΩ Rated VDRM, RGK=1KΩ, TC=125°C VD=12V, QUAD I, II, III VD=12V, QUAD IV RGK=1KΩ VD=12V, QUAD I, II, III, IV ITM=6.0A, tp=380μs VD=2 /3 VDRM, TC=125°C 11 TYP MAX 10 200 UNITS μA μA mA mA mA V V V/μs 2.5 5.4 1.6 0.95 1.25 5.0 9.0 5.0 1.75 1.75 R1 (12-February 2010) CQD-4M CQD-4N SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) Gate 4) MT2 MARKING: FULL PART NUMBER R1 (12-February 2010) w w w. c e n t r a l s e m i . c o m