0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
CS223-2M_10

CS223-2M_10

  • 厂商:

    CENTRAL

  • 封装:

  • 描述:

    CS223-2M_10 - SURFACE MOUNT 2 AMP SILICON SCR 600 THRU 800 VOLTS - Central Semiconductor Corp

  • 数据手册
  • 价格&库存
CS223-2M_10 数据手册
CS223-2M CS223-2N SURFACE MOUNT 2 AMP SILICON SCR 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-2M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=60°C) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Peak Gate Voltage, tp=10μs Operating Junction Temperature Storage Temperature Thermal Resistance SYMBOL VDRM, VRRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM TJ Tstg ΘJA CS223-2M 600 2.0 10 CS223-2N 800 UNITS V A A A2s W W A V °C °C °C/W 0.24 2.0 0.1 1.0 8.0 -40 to +125 -40 to +150 62.5 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt Rated VDRM, VRRM, RGK=1KΩ Rated VDRM, VRRM, RGK=1KΩ, TC=125°C VD=12V RGK=1KΩ VD=12V ITM=4.0A, tp=380μs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C TYP MAX 10 100 UNITS μA μA μA mA V V V/μs 20 200 2.0 0.8 1.4 10 1.7 R1 (12-February 2010) CS223-2M CS223-2N SURFACE MOUNT 2 AMP SILICON SCR 600 THRU 800 VOLTS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER R1 (12-February 2010) w w w. c e n t r a l s e m i . c o m
CS223-2M_10 价格&库存

很抱歉,暂时无法提供与“CS223-2M_10”相匹配的价格&库存,您可以联系我们找货

免费人工找货