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CS223-4N

CS223-4N

  • 厂商:

    CENTRAL

  • 封装:

  • 描述:

    CS223-4N - SURFACE MOUNT 4 AMP SILICON SCR 600 THRU 800 VOLTS - Central Semiconductor Corp

  • 数据手册
  • 价格&库存
CS223-4N 数据手册
CS223-4M CS223-4N SURFACE MOUNT 4 AMP SILICON SCR 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=85°C) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=20μs Average Gate Power Dissipation Peak Gate Current, tp=20μs Critical Rate of Rise of On-State Current Operating Junction Temperature Storage Temperature Thermal Resistance SYMBOL VDRM, VRRM IT(RMS) ITSM I2t PGM PG (AV) IGM di/dt TJ Tstg ΘJA CS223-4M 600 4.0 30 4.5 3.0 0.2 1.2 50 CS223-4N 800 UNITS V A A A2s W W A A/μs °C °C °C/W -40 to +125 -40 to +150 62.5 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IDRM, IGT IH VGT VTM dv/dt IRRM IRRM Rated VDRM, Rated VDRM, VRRM, RGK=1KΩ VRRM, RGK=1KΩ, TC=125°C 20 TYP MAX 10 200 UNITS μA μA μA mA V V V/μs VD=12V, RL=10Ω IT=50mA, RGK=1KΩ VD=12V, RL=10Ω ITM=8.0A, tp=380μs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C 38 0.25 0.55 1.6 200 2.0 0.8 1.8 10 R1 (12-February 2010) CS223-4M CS223-4N SURFACE MOUNT 4 AMP SILICON SCR 600 THRU 800 VOLTS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER R1 (12-February 2010) w w w. c e n t r a l s e m i . c o m
CS223-4N 价格&库存

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