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CS223M_10

CS223M_10

  • 厂商:

    CENTRAL

  • 封装:

  • 描述:

    CS223M_10 - SURFACE MOUNT 0.8 AMP SILICON SCR 600 VOLTS - Central Semiconductor Corp

  • 数据手册
  • 价格&库存
CS223M_10 数据手册
CS223M SURFACE MOUNT 0.8 AMP SILICON SCR 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223M type is an epoxy molded Silicon Controlled Rectifier designed for circuit sensing, detection and control applications including lamp drivers and small motor control MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=60°C) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Peak Gate Voltage, tp=10μs Operating Junction Temperature Storage Temperature Thermal Resistance SYMBOL VDRM, VRRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM TJ Tstg ΘJA 600 0.8 10 0.24 2.0 0.1 1.0 8.0 -40 to +125 -40 to +150 62.5 UNITS V A A A2s W W A V °C °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IDRM, IGT IH VGT VTM dv/dt IRRM IRRM Rated VDRM, Rated VDRM, VD=12V RGK=1KΩ VD=12V ITM=1.0A, tp=380μs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C 25 VRRM, RGK=1KΩ VRRM, RGK=1KΩ, TC=125°C TYP MAX 1.0 100 UNITS μA μA μA mA V V V/μs 20 0.25 0.61 1.2 200 5.0 0.8 1.7 R1 (12-February 2010) CS223M SURFACE MOUNT 0.8 AMP SILICON SCR 600 VOLTS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Anode 3) Cathode 4) Anode MARKING: FULL PART NUMBER R1 (12-February 2010) w w w. c e n t r a l s e m i . c o m
CS223M_10 价格&库存

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