CS89M_10

CS89M CS89N SURFACE MOUNT 0.8 AMP SILICON SCR 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS89M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=60°C) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Peak Gate Voltage, tp=10μs Operating Junction Temperature Storage Temperature Thermal Resistance SYMBOL VDRM, VRRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM TJ Tstg ΘJA CS89M 600 0.8 10 0.24 2.0 0.1 1.0 8.0 CS89N 800 UNITS V A A A2s W W A V °C °C °C/W -40 to +125 -40 to +150 104 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt Rated VDRM, VRRM, RGK=1KΩ Rated VDRM, VRRM, RGK=1KΩ, TC=125°C VD=12V RGK=1KΩ VD=12V ITM=1.0A, tp=380μs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C 25 TYP MAX 1.0 100 UNITS μA μA μA mA V V V/μs 20 0.25 0.61 1.2 200 5.0 0.8 1.7 R1 (12-February 2010) CS89M CS89N SURFACE MOUNT 0.8 AMP SILICON SCR 600 THRU 800 VOLTS SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Gate 2) Anode 3) Cathode MARKING: FULL PART NUMBER R1 (12-February 2010) w w w. c e n t r a l s e m i . c o m