CSD-4M

CSD-4M CSD-4N 4.0 AMP SCR 600 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=85°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=20µs) Average Gate Power Dissipation Peak Gate Current (tp=20µs) Critical Rate of Rise of On-State Current Storage Temperature Junction Temperature VDRM, VRRM IT(RMS) ITSM I 2t PGM PG (AV) IGM di/dt Tstg TJ CSD -4M 600 4.0 30 4.5 3.0 0.2 1.2 50 -40 to +150 -40 to +125 CSD -4N 800 UNITS V A A A2s W W A A/µs °C °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IDRM, IGT IH VGT VTM dv/dt IRRM IRRM Rated VDRM, Rated VDRM, VRRM, RGK=1KΩ VRRM, RGK=1KΩ, TC=125°C 20 TYP MAX 10 200 UNITS µA µA µA mA V V V/µs VD=12V, RL=10Ω IT=50mA, RGK=1KΩ VD=12V, RL=10Ω ITM=8.0A, tp=380µs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C 38 0.25 0.55 1.6 200 2.0 0.8 1.8 10 R0 (20-May 2004) Central TM Semiconductor Corp. CSD-4M CSD-4N 4.0 AMP SCR 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE 3) GATE 4) ANODE MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H J K L M N DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.086 0.094 2.18 2.39 0.018 0.032 0.46 0.81 0.035 0.050 0.89 1.27 0.205 0.228 5.21 5.79 0.047 0.055 1.20 1.40 0.018 0.024 0.45 0.60 0.250 0.268 6.35 6.81 0.205 0.215 5.20 5.46 0.235 0.245 5.97 6.22 0.100 0.108 2.55 2.74 0.025 0.040 0.64 1.02 0.025 0.035 0.64 0.89 0.090 2.28 DPAK THYRISTOR (REV: R0) R0 (20-May 2004)