CSD-4M CSD-4N 4.0 AMP SCR 600 THRU 800 VOLTS
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER
DPAK THYRISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=85°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=20µs) Average Gate Power Dissipation Peak Gate Current (tp=20µs) Critical Rate of Rise of On-State Current Storage Temperature Junction Temperature VDRM, VRRM IT(RMS) ITSM I 2t PGM PG (AV) IGM di/dt Tstg TJ CSD -4M 600 4.0 30 4.5 3.0 0.2 1.2 50 -40 to +150 -40 to +125 CSD -4N 800 UNITS V A A A2s W W A A/µs °C °C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IDRM, IGT IH VGT VTM dv/dt IRRM IRRM Rated VDRM, Rated VDRM, VRRM, RGK=1KΩ VRRM, RGK=1KΩ, TC=125°C 20
TYP
MAX 10 200
UNITS µA µA µA mA V V V/µs
VD=12V, RL=10Ω IT=50mA, RGK=1KΩ VD=12V, RL=10Ω ITM=8.0A, tp=380µs VD=2 /3 VDRM, RGK=1KΩ, TC=125°C
38 0.25 0.55 1.6
200 2.0 0.8 1.8
10
R0 (20-May 2004)
Central
TM
Semiconductor Corp.
CSD-4M CSD-4N 4.0 AMP SCR 600 THRU 800 VOLTS
DPAK THYRISTOR CASE - MECHANICAL OUTLINE
LEAD CODE: 1) CATHODE 2) ANODE 3) GATE 4) ANODE MARKING CODE: FULL PART NUMBER
SYMBOL A B C D E F G H J K L M N
DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.086 0.094 2.18 2.39 0.018 0.032 0.46 0.81 0.035 0.050 0.89 1.27 0.205 0.228 5.21 5.79 0.047 0.055 1.20 1.40 0.018 0.024 0.45 0.60 0.250 0.268 6.35 6.81 0.205 0.215 5.20 5.46 0.235 0.245 5.97 6.22 0.100 0.108 2.55 2.74 0.025 0.040 0.64 1.02 0.025 0.035 0.64 0.89 0.090 2.28 DPAK THYRISTOR (REV: R0)
R0 (20-May 2004)
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