CSD-8M_10

CSD-8M CSD-8N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 8 AMP, 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-8M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Forward Gate Current, tp=10μs Peak Forward Gate Voltage, tp=10μs Peak Reverse Gate Voltage, tp=10μs Critical Rate of Rise of On-State Current Operating Junction Temperature Storage Temperature SYMBOL VDRM, VRRM IT(RMS) ITSM I2t PGM PG (AV) IFGM VFGM VRGM di/dt TJ Tstg CSD-8M 600 8.0 80 32 40 1.0 4.0 16 5.0 50 CSD-8N 800 UNITS V A A A2s W W A V V A/μs °C °C -40 to +125 -40 to +150 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL IDRM, IDRM, IGT IH VGT VTM dv/dt IRRM IRRM TEST CONDITIONS Rated VDRM, Rated VDRM, VRRM 3.0 7.3 0.9 1.3 200 VRRM, TC=125°C VD=12V, RL=10Ω MIN TYP MAX 10 2.0 15 20 1.5 1.8 UNITS μA mA mA mA V V V/μs IT=100mA VD=12V, RL=10Ω ITM=16A, tp=380μs VD=2 /3 VDRM, TC=125°C R1 (17-February 2010) CSD-8M CSD-8N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 8 AMP, 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER R1 (17-February 2010) w w w. c e n t r a l s e m i . c o m