CTLDM7003-M621

CTLDM7003-M621 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7003-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM™ 2x1mm package. MARKING CODE: CS TLM621 CASE • Device is Halogen Free by design FEATURES: • • • • • • ESD Protection up to 2kV Low rDS(ON) Low Threshold Voltage Fast Switching Logic Level Compatible Small TLMTM 2x1mm Package UNITS V V V mA A W °C °C/W APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID IDM PD TJ, Tstg ΘJA 50 50 12 280 1.5 0.9 -65 to +150 139 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=5.0V IGSSF, IGSSR VGS=10V IGSSF, IGSSR VGS=12V IDSS VDS=50V, VGS=0 BVDSS VGS=0, ID=10μA 50 VGS(th) VDS=VGS, ID=250μA 0.49 VSD VGS=0, IS=115mA rDS(ON) VGS=1.8V, ID=50mA 1.6 rDS(ON) VGS=2.5V, ID=50mA 1.3 rDS(ON) VGS=5.0V, ID=50mA 1.1 gFS VDS=10V, ID=200mA 200 Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm2. MAX 100 2.0 2.0 50 1.0 1.4 3.0 2.5 2.0 5.0 50 25 UNITS nA μA μA nA V V V Ω Ω Ω mS pF pF pF R1 (17-February 2010) CTLDM7003-M621 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TLM621 CASE - MECHANICAL OUTLINE SUGGESTED MOUNTING PADS (Dimensions in mm) R0 *Exposed pad P connects pins 1, 2, 5, and 6. PIN CONFIGURATION LEAD CODE: 1) Drain 2) Drain 3) Gate 4) Source 5) Drain 6) Drain MARKING CODE: CS R1 (17-February 2010) w w w. c e n t r a l s e m i . c o m