CTLDM8002A-M621H

CTLDM8002A-M621H SURFACE MOUNT TLM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CTLDM8002A-M621H is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM™ package. FEATURES: • Low RDS(on) • Low VDS(on) • Low Threshold Voltage • Fast Switching • Logic Level Compatible • Small, Very Low Profile, TLM™ Top View Bottom View TLM621H CASE MARKING CODE: CMA APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment MAXIMUM RATINGS (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance (Note 1) SYMBOL VDS VDG VGS ID IS IDM ISM PD ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IGSSF VGS=20V, VDS=0V IGSSR VGS=20V, VDS=0V IDSS VDS=50V, VGS=0V IDSS VDS=50V, VGS=0V, Tj=125°C ID(ON) VGS=10V, VDS=10V 500 BVDSS VGS=0V, ID=10µA 50 Notes: (1) Mounted on a 4-layer JEDEC test board with one thermal vias connecting the exposed thermal pad to the first buried plane. PCB was constructed as per JEDEC standards JESD51-5 and JESD51-7. P E R I L IN M TJ,Tstg ΘJA Y R A -65 to +150 75 MAX 100 100 1.0 500 50 50 20 280 280 1.5 1.5 1.6 UNITS V V V mA mA A A W °C °C/W UNITS nA nA µA µA mA V R0 (15-June 2006) Central TM Semiconductor Corp. P L RE IM SURFACE MOUNT TLM CTLDM8002A-M621H INA RY TM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET ELECTRICAL CHARACTERISTICS - Continued (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX VGS(th) VDS=VGS, ID=250µA 1.0 2.5 VDS(ON) VGS=10V, ID=500mA 1.5 VDS(ON) VGS=5.0V, ID=50mA 0.15 rDS(ON) VGS=10V, ID=500mA 2.5 rDS(ON) VGS=10V, ID=500mA, Tj=125°C 4.0 rDS(ON) VGS=5.0V, ID=50mA 3.0 rDS(ON) VGS=5.0V, ID=50mA, Tj=125°C 5.0 Yfs VDS =10V, ID=200mA 200 Crss VDS=25V, VGS=0, f=1.0MHz 7.0 Ciss VDS=25V, VGS=0, f=1.0MHz 70 Coss VDS=25V, VGS=0, f=1.0MHz 15 ton VDD=30V, VGS=10V, ID=200mA 20 toff RG=25Ω, RL=150Ω 20 VSD VGS=0V, IS=115mA 1.3 UNITS V V V Ω Ω Ω Ω msec pF pF pF ns ns V TLM621H CASE - MECHANICAL OUTLINE LEAD CODE: 1) SOURCE 2) DRAIN 3) DRAIN 4) DRAIN 5) DRAIN 6) GATE MARKING CODE: CMA PIN CONFIGURATION: R0 (15-June 2006)