CTLM8110-M832D

CTLM8110-M832D MULTI DISCRETE MODULE ™ SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM8110M832D consists of an P-Channel Enhancement-mode MOSFET and a Low VF Schottky Rectifier. Packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. MARKING CODE: CFR FEATURES • Dual Chip Device • High Current (0.95A) MOSFET and 1.0A Schottky Rectifier • Low rDS(ON): 0.24Ω MAX @ VGS=1.8V • Low VF Schottky Rectifier (550mV @ 1.0A MAX) • Small TLM 3x2mm Leadless Surface Mount Package • Complementary Device: CTLM7110-M832D UNITS W °C °C/W V V A A A A A V A A A UNITS nA nA V V V Ω Ω Ω Ω S TLM832D CASE • Device is Halogen Free by design APPLICATIONS • • • • Load Power Switches DC - DC Converters LCD Backlighting Battery powered portable devices including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc. MAXIMUM RATINGS - CASE: (TA=25°C) SYMBOL Power Dissipation (Note 1) PD 1.65 Operating and Storage Junction Temperature TJ, Tstg -65 to +150 Thermal Resistance ΘJA 76 MAXIMUM RATINGS - Q1: (TA=25°C) Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 8.0 Continuous Drain Current (Steady State) ID 0.86 Continuous Drain Current, tp