CTLT953-M833

CTLT953-M833 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT953-M833 is a high performance 5.0A High Current PNP Transistor designed for applications where small size and operational efficiency are prime requirements. With a maximum power dissipation of 4.5W, and a very small package footprint, this device is 80% smaller than a comparible SOT-223 device. This leadless package design has a watts per unit area at least twice that of equivalent package devices. MARKING CODE: CHA4 • NPN Complement: CTLT853-M833 TLM833 CASE FEATURES: • High Voltage (140V) • High Thermal Efficiency • High Current (IC=5.0A) • 3 x 3mm TLM™ case • Low VCE(SAT) = 420mV MAX @ 4.0A MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance (Note 1) Thermal Resistance (Note 2) Thermal Resistance (Note 3) SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg ΘJA ΘJA ΘJA 140 100 6.0 5.0 4.5 4.0 2.5 -65 to +150 27.78 31.25 50.00 UNITS V V V A W W W °C °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=100V ICBO VCB=100V, TA=100°C ICER VCE=100V, RBE≤1.0kΩ IEBO VEB=6.0V BVCBO IC=100μA 140 170 BVCER IC=10mA, RBE≤1.0kΩ 140 150 BVCEO IC=10mA 100 120 BVEBO IE=100μA 6.0 9.0 VCE(SAT) IC=100mA, IB=10mA 20 VCE(SAT) IC=1.0A, IB=100mA 90 VCE(SAT) IC=2.0A, IB=200mA 170 VCE(SAT) IC=4.0A, IB=400mA 320 VBE(SAT) IC=4.0A, IB=400mA 1.0 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 75 mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 75 mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 25 mm2 MAX 50 1.0 50 10 50 120 220 420 1.2 UNITS nA μA nA nA V V V V mV mV mV mV V R1 (17-February 2010) CTLT953-M833 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR ELECTRICAL SYMBOL hFE hFE hFE hFE hFE fT Cob CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP MAX VCE=1.0V, IC=10mA 100 VCE=1.0V, IC=1.0A 100 200 300 VCE=1.0V, IC=3.0A 50 70 VCE=1.0V, IC=4.0A 30 45 VCE=1.0V, IC=10A 15 VCE=10V, IC=100mA, f=50MHz 150 VCB=10V, IE=0, f=1.0MHz 45 UNITS MHz pF TLM833 CASE - MECHANICAL OUTLINE REQUIRED MOUNTING PADS (Dimensions in mm) LEAD CODE: 1) Emitter 2) Emitter 3) Base 4) N.C. 5) 6) 7) 8) Collector Collector Collector Collector Failure to use this mouning pad layout may result in damage to device. MARKING CODE: CHA4 R1 (17-February 2010) w w w. c e n t r a l s e m i . c o m