CWDM3011NTR13

CWDM3011N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM3011N is a high current silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE: C3011N SOIC-8 CASE APPLICATIONS: • Load/Power switches • DC-DC converter circuits • Power management FEATURES: • Low rDS(ON) • High current • Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS VGS 30 UNITS V 20 V Continuous Drain Current (Steady State) ID 11 A Maximum Pulsed Drain Current, tp=10μs IDM PD 50 A 2.5 W Gate-Source Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg ΘJA -55 to +150 °C 50 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS(th) VSD rDS(ON) rDS(ON) Crss Ciss Coss Qg(tot) Qgs Qgd ton toff VGS=0, ID=250μA VGS=VDS, ID=250μA MAX 100 UNITS nA 1.0 μA 3.0 V 1.2 V 14 20 mΩ 18 30 mΩ 30 1.0 VGS=0, IS=2.6A VGS=10V, ID=11A VGS=4.5V, ID=9.0A VDS=15V, VGS=0, f=1.0MHz VDS=15V, VGS=0, f=1.0MHz VDS=15V, VGS=0, f=1.0MHz VDD=15V, VGS=5.0V, ID=10A V 1.8 100 pF 860 pF 120 pF 6.3 nC ID=10A 2.0 nC ID=10A 2.3 nC VDD=15V, VGS=10V, ID=10A RG=0.3Ω 20 ns 43 ns VDD=15V, VDD=15V, VGS=5.0V, VGS=5.0V, R2 (10-August 2018) CWDM3011N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET SOIC-8 CASE - MECHANICAL OUTLINE SYMBOL A B C D E F G H J K PIN CONFIGURATION LEAD CODE: 1) Source 5) 2) Source 6) 3) Source 7) 4) Gate 8) DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.055 0.061 1.392 1.554 0.004 0.009 0.100 0.224 0.016 0.035 0.40 0.90 0.007 0.010 0.19 0.25 0.145 0.157 3.80 4.00 0.189 0.198 4.80 5.00 0.150 3.81 0.228 0.244 5.80 6.20 0.013 0.020 0.33 0.51 0.050 1.27 SOIC-8 (REV: R1) SUGGESTED MOUNTING PADS (Dimensions in mm) Drain Drain Drain Drain MARKING CODE: C3011N R2 (10-August 2018) w w w. c e n t r a l s e m i . c o m CWDM3011N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R2 (10-August 2018) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)