CXT3019_10

CXT3019 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT Cob Cib NF SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA UNITS V V V A A W °C °C/W UNITS nA nA V V V 0.2 0.5 1.1 50 90 100 50 15 100 12 60 4.0 MHz pF pF dB 300 V V V 140 80 7.0 1.0 1.5 1.2 -65 to +175 125 MAX 10 10 CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=90V VEB=5.0V IC=100μA IC=30mA IE=100μA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA VCE=10V, IC=0.1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, VCE=10V, IC=500mA IC=1.0A 140 80 7.0 VCE=10V, IC=50mA, f=1.0MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz R7 (23-February 2010) CXT3019 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R7 (23-February 2010) w w w. c e n t r a l s e m i . c o m