CXT3150_10

CXT3150 SURFACE MOUNT NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3150 type is a NPN Silicon Power Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, high gain, fast switching applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJA 50 25 7.0 5.0 1.0 1.2 -65 to +150 104 UNITS V V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob VCB=50V VEB=7.0V IC=10mA IC=3.0A, IB=150mA IC=4.0A, IB=200mA IC=3.0A, IB=150mA IC=4.0A, IB=200mA VBE=2.0V, IC=500mA VCE=2.0V, IC=2.0A VCE=2.0V, VCE=6.0V, IC=5.0A IC=50mA, f=200MHz 250 150 50 150 25 MAX 1.0 1.0 0.5 0.6 1.10 1.40 550 UNITS µA µA V V V V V MHz 50 pF VCB=10V, IE=0, f=1.0MHz R6 (23-February 2010) CXT3150 SURFACE MOUNT NPN SILICON POWER TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R6 (23-February 2010) w w w. c e n t r a l s e m i . c o m