CXT3410

CXT3410

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CXT3410 - SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CXT3410 数据手册
CXT3410 NPN CXT7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3410 and CXT7410 are Low VCE(SAT) NPN and PNP silicon transistors packaged in the SOT-89 case. High collector current coupled with a low saturation voltage make this an ideal choice for industrial/consumer applications where operational efficiency and size are high priority. SOT-89 CASE FEATURES: • • • • VCE(SAT)=275mV TYP @ IC=1.0A High Current (1.0A MAX) Low Voltage (40V MAX) SOT-89 Surface Mount Package MARKING CODE: FULL PART NUMBER APPLICATIONS: • • • • • Power Management and DC/DC Converters Portable and Battery Powered Products Cellular and Cordless Phones PDAs, Computers, Digital Cameras Disk and Tape Drives UNITS V V V A A W °C °C/W MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA 40 25 6.0 1.0 1.5 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CXT3410 CXT7410 SYMBOL TEST CONDITIONS MIN TYP TYP ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100μA 40 BVCEO IC=10mA 25 BVEBO IE=100μA 6.0 VCE(SAT) IC=50mA, IB=5.0mA 20 25 VCE(SAT) IC=100mA, IB=10mA 35 40 VCE(SAT) IC=200mA, IB=20mA 75 80 VCE(SAT) IC=500mA, IB=50mA 130 150 VCE(SAT) IC=800mA, IB=80mA 200 220 VCE(SAT) IC=1.0A, IB=100mA 250 275 MAX 100 100 50 75 150 250 400 450 UNITS nA nA V V V mV mV mV mV mV mV R1 (23-February 2010) CXT3410 NPN CXT7410 PNP SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS ELECTRICAL SYMBOL VBE(SAT) VBE(ON) hFE hFE hFE hFE fT Cob Cob CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX IC=800mA, IB=80mA 1.1 VCE=1.0V, IC=10mA 0.9 VCE=1.0V, IC=10mA 100 VCE=1.0V, IC=100mA 100 300 VCE=1.0V, IC=500mA 100 VCE=1.0V, IC=1.0A 50 VCE=10V, IC=50mA, f=100MHz 100 VCB=10V, IE=0, f=1.0MHz (CXT3410) 10 VCB=10V, IE=0, f=1.0MHz (CXT7410) 15 UNITS V V MHz pF  pF SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (23-February 2010) w w w. c e n t r a l s e m i . c o m
CXT3410
物料型号: - CXT3410(NPN型) - CXT7410(PNP型)

器件简介: CENTRAL SEMICONDUCTOR生产的CXT3410和CXT7410是低VCE(SAT) NPN和PNP硅晶体管,封装在SOT-89外壳中。高集电极电流和低饱和电压使得这些晶体管非常适合工业/消费应用,这些应用中操作效率和尺寸是优先考虑的因素。

引脚分配: - SOT-89封装的引脚代码:1) 发射极 2) 集电极 3) 基极

参数特性: - VCE(SAT)=275mV(典型值,@ IC=1.0A) - 高电流(最大1.0A) - 低电压(最大40V) - SOT-89表面贴装封装

功能详解: - 这些晶体管适用于功率管理和DC/DC转换器、便携式和电池供电产品、手机、无线电话、PDA、电脑、数码相机、磁盘和磁带驱动器等。

应用信息: - 功率管理和DC/DC转换器 - 便携式和电池供电产品 - 手机和无线电话 - PDA、电脑、数码相机 - 磁盘和磁带驱动器

封装信息: - SOT-89封装,机械尺寸图和尺寸表已提供,包括英寸和毫米单位的最小值和最大值。
CXT3410 价格&库存

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