CXT5551HC SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 180 160 6.0 1.0 1.2 -65 to +150 104
UNITS V V V A W °C °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=1.0A VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 80 80 30 10 100 180 160 6.0
MAX 50 50 50
UNITS nA µA nA V V V
0.15 0.20 1.00 1.00 250
V V V V
MHz 15 pF
R1 (23-February 2010)
CXT5551HC SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR
SOT-89 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER
R1 (23-February 2010)
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