CXT953_10

CXT953 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT953 type is a high current, high voltage silicon PNP transistor. Packaged in the SOT-89 surface mount case, the CXT953 is ideal for industrial and consumer applications requiring high energy efficiency in a small package. MARKING: FULL PART NUMBER SOT-89 CASE FEATURES: APPLICATIONS: • Power Management • DC/DC Converters • Motor Driving • Switching • Low Saturation Voltage: VCE(SAT)=0.42V MAX @ IC=4.0A • NPN Complement: CXT853 SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 140 100 6.0 5.0 1.2 -65 to +150 104 UNITS V V V A W °C °C/W MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO ICER IEBO BVCBO BVCER BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) TEST CONDITIONS VCB=100V VCB=100V, TA=100°C VCE=100V, RBE≤1.0kΩ VEB=6.0V IC=100μA IC=10mA, RBE≤1.0kΩ IC=10mA IE=100μA IC=100mA, IB=10mA IC=1.0A, IB=100mA IC=2.0A, IB=200mA IC=4.0A, IB=400mA IC=4.0A, IB=400mA 140 140 100 6.0 170 150 120 9.0 20 90 170 320 1.0 50 120 220 420 1.2 MIN TYP MAX 50 1.0 50 10 UNITS nA μA nA nA V V V V mV mV mV mV V R1 (23-February 2010) CXT953 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR SYMBOL hFE hFE hFE hFE hFE fT Cob ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP VCE=1.0V, IC=10mA VCE=1.0V, IC=1.0A VCE=1.0V, IC=3.0A VCE=1.0V, IC=4.0A VCE=1.0V, IC=10A VCE=10V, IC=100mA, f=50MHz VCB=10V, IE=0, f=1.0MHz 100 100 50 30 200 70 45 15 150 45 MAX 300 UNITS MHz pF SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (23-February 2010) w w w. c e n t r a l s e m i . c o m