CXTA64

CXTA64

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CXTA64 - SURFACE MOUNT SILICON COMPLEMENTARY DARLINGTON TRANSISTORS - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CXTA64 数据手册
CXTA14 NPN CXTA64 PNP SURFACE MOUNT SILICON COMPLEMENTARY DARLINGTON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA14, CXTA64 types are complementary silicon Darlington transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. MARKING CODE: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS (TA=25°C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 104 °C °C/W VCBO VCEO VEBO IC PD 30 30 10 500 1.2 UNITS V V V mA W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICBO IEBO BVCES VCE(SAT) VBE(ON) hFE hFE fT TEST CONDITIONS VCB=30V VEB=10V IC=100µA IC=100mA, IB=0.1mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA VCE=5.0V, IC=10mA, f=100MHz 30 1.5 2.0 10,000 20,000 125 MHz MIN MAX 100 100 UNITS nA nA V V V R5 (20-May 2004) Central TM Semiconductor Corp. CXTA14 NPN CXTA64 PNP SURFACE MOUNT SILICON COMPLEMENTARY DARLINGTON TRANSISTORS SOT-89 CASE - MECHANICAL OUTLINE BOTTOM VIEW LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE: FULL PART NUMBER DIMENSIONS INCHES MILLIMETERS MAX MIN MAX SYMBOL MIN A 0.055 0.067 1.40 1.70 B 4° 4° C 0.014 0.018 0.35 0.46 D 0.173 0.185 4.40 4.70 E 0.064 0.074 1.62 1.87 F 0.146 0.177 3.70 4.50 G 0.090 0.106 2.29 2.70 H 0.028 0.051 0.70 1.30 J 0.014 0.019 0.36 0.48 K 0.017 0.023 0.44 0.58 L 0.059 1.50 M 0.118 3.00 SOT-89 (REV: R4) R5 (20-May 2004)
CXTA64
1. 物料型号: - CXTA14(NPN型) - CXTA64(PNP型)

2. 器件简介: - 这些是互补硅达林顿晶体管,由Central Semiconductor Corp.制造,采用外延平面工艺制造,表面贴装封装,设计用于需要极高增益的应用。

3. 引脚分配: - 引脚1:发射极(Emitter) - 引脚2:集电极(Collector) - 引脚3:基极(Base)

4. 参数特性: - 最大额定值(Ta=25°C): - 集-基电压(VCBO):30V - 集-射电压(VCEO):连续30V - 发-基电压(VEBO):10V - 集电极电流(IC):500mA - 功率耗散(PD):1.2W - 工作和存储: - 结温(TJ.Tstg):-65至+150°C - 热阻(θJA):104°C/W

5. 功能详解应用信息: - 这些晶体管具有非常高的电流增益(hFE),在VCE=5.0V,Ic=10mA时最小为10,000,而在VCE=5.0V,Ic=100mA时可达20,000。它们适用于需要高增益和大电流的应用。

6. 封装信息: - SOT-89封装,具体尺寸如下: - A:1.40-1.70英寸(35.56-43.18毫米) - C:0.35-0.46英寸(8.89-11.68毫米) - D:4.40-4.70英寸(111.76-119.38毫米) - E:1.62-1.87英寸(41.15-47.49毫米) - F:3.70-4.50英寸(93.98-114.30毫米) - G:2.29-2.70英寸(58.17-68.58毫米) - H:0.70-1.30英寸(17.78-33.02毫米) - J:0.36-0.48英寸(9.14-12.19毫米) - K:0.44-0.58英寸(11.18-14.73毫米) - L:1.50英寸(38.10毫米) - M:3.00英寸(76.20毫米)
CXTA64 价格&库存

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