CZT2000_10

CZT2000 SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon darlington transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VEBO IC PD TJ, Tstg ΘJA 200 200 10 600 2.0 -65 to +150 62.5 UNITS V V V mA W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO IEBO BVCES VCE(SAT) VCE(SAT) VCE(SAT) VBE(ON) hFE hFE hFE VCB=180V VBE=10V IC=1.0mA IC=20mA, IB=25µA IC=80mA, IB=40µA IC=160mA, IB=100µA VCE=5.0V, IC=160mA VCE=5.0V, IC=100µA VCE=5.0V, IC=10mA VCE=5.0V, IC=160mA 200 MAX 500 100 0.9 1.1 1.2 2.0 UNITS nA nA V V V V V 3000 3000 3000 R6 (1-March 2010) CZT2000 SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R6 (1-March 2010) w w w. c e n t r a l s e m i . c o m