CZT2680_10

CZT2680 SURFACE MOUNT HIGH VOLTAGE NPN SILICON SWITCHING POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2680 NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers and general high voltage switching applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA 250 200 6.0 1.5 2.0 2.0 -65 to +150 62.5 UNITS V V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob ton toff VCB=200V IC=100µA IC=20mA IE=100µA IC=100mA, IB=10mA IC=500mA, IB=50mA IC=1.0A, IB=150mA IC=500mA, IB=50mA IC=1.0A, IB=150mA VCE=5.0V, IC=20mA VCE=5.0V, IC=500mA VCE=5.0V, IC=1.0A VCE=20V, IC=100mA, f=1.0MHz VCB=10V, IE=0, f=1.0MHz IC=500mA, VCC=20V, IC=500mA, VCC=20V, IB1= IB1= IB2=50mA IB2=50mA 40 40 15 50 250 200 6.0 435 275 9.0 45 95 135 0.83 0.95 105 90 47 80 MAX 100 UNITS nA V V V 150 200 500 1.10 1.20 mV mV mV V V MHz 30 pF µs µs 0.3 1.0 R3 (1-March 2010) CZT2680 SURFACE MOUNT HIGH VOLTAGE NPN SILICON SWITCHING POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R3 (1-March 2010) w w w. c e n t r a l s e m i . c o m