CZT2955

CZT2955 PNP CZT3055 NPN 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2955 and CZT3055 types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 6.0 amps. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 62.5 °C °C/W VCBO VCER VCEO VEBO IC IB PD 100 70 60 7.0 6.0 3.0 2.0 UNITS V V V V A A W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO ICEV IEBO BVCER BVCEO VCE=30V VCE=100V, VEB=1.5V VEB=7.0V IC=30mA, RBE=100Ω IC=30mA 70 60 MAX 700 1.0 5.0 UNITS µA mA mA V V * VCE(SAT) IC=4.0A, IB=400mA * VBE(ON) VCE=4.0V, IC=4.0A * hFE VCE=4.0V, IC=4.0A * hFE fT VCE=4.0V, IC=6.0A VCE=10V, IC=500mA, f=1.0MHz 1.1 1.5 20 5.0 2.5 70 V V MHz * Pulsed, 2% D.C. R3 (17-June 2004) Central TM Semiconductor Corp. CZT2955 PNP CZT3055 NPN 2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0° 10° 0° 10° 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15° 15° 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3) R3 (17-June 2004)