CZT32C

CZT31C NPN CZT32C PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT31C and CZT32C types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 3.0 amps. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD TJ, Tstg ΘJA ΘJC 100 100 5.0 3.0 6.0 1.0 2.0 10 -65 to +150 62.5 12.5 UNITS V V V A A A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES ICEO IEBO BVCEO VCE(SAT) VBE(ON) hFE hFE fT VCE=100V VCE=60V VEB=5.0V IC=30mA IC=3.0A, IB=375mA VCE=4.0V, IC=3.0A VCE=4.0V, IC=1.0A VCE=4.0V, IC=3.0A VCE=10V, IC=500mA, f=1.0MHz 25 10 3.0 100 MAX 200 300 1.0 1.2 1.8 100 UNITS µA µA mA V V V MHz R4 (1-March 2010) CZT31C NPN CZT32C PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R4 (1-March 2010) w w w. c e n t r a l s e m i . c o m