CZT5338_10

CZT5338 SURFACE MOUNT NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high current amplification and switching capability. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICEO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob Cib td tr ts tf SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJA UNITS V V V A A W °C °C/W 100 100 6.0 5.0 1.0 2.0 -65 to +150 62.5 CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=100V VCE=90V VBE=6.0V IC=50mA 100 IC=2.0A, IB=200mA IC=5.0A, IB=500mA IC=2.0A, IB=200mA IC=5.0A, IB=500mA VCE=2.0V, IC=500mA 30 VCE=2.0V, IC=2.0A 30 VCE=2.0V, IC=5.0A 20 VCE=10V, IC=500mA, f=10MHz 30 VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA VCC=40V, VBE=3.0V, IC=2.0A, IB1=200mA VCC=40V, IC=2.0A, IB1=IB2=200mA VCC=40V, IC=2.0A, IB1=IB2=200mA MAX 10 100 100 0.7 1.2 1.2 1.8 120 UNITS µA µA µA V V V V V 250 1000 100 100 2.0 200 MHz pF pF ns ns µs ns R5 (1-March 2010) CZT5338 SURFACE MOUNT NPN SILICON POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R5 (1-March 2010) w w w. c e n t r a l s e m i . c o m