CZT5551HC

CZT5551HC

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CZT5551HC - SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CZT5551HC 数据手册
CZT5551HC SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg ΘJA -65 to +150 62.5 °C °C/W SYMBOL VCBO VCEO VEBO IC PD 180 160 6.0 1.0 2.0 UNITS V V V A W SYMBOL ICBO ICBO IEBO ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IC=10mA, IB=5.0mA IB=1.0mA 180 160 6.0 MAX 50 50 50 UNITS nA µA nA V V BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) 0.15 0.20 1.00 1.00 V V V V V IC=50mA, IB=5.0mA R0 (28-January 2005) Central SYMBOL hFE hFE hFE hFE fT Cob TM CZT5551HC SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR Semiconductor Corp. ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=1.0A VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 80 80 30 TYP MAX UNITS 250 10 100 15 MHz pF SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER R0 (28-January 2005)
CZT5551HC
1. 物料型号:CZT5551HC,由Central Semiconductor Corp.生产。

2. 器件简介:CZT5551HC是一种高电流NPN硅晶体管,采用外延平面工艺制造,表面贴装封装,适用于高电压和高电流放大应用。

3. 引脚分配:SOT-223封装,引脚代码为1) 基极 2) 集电极 3) 发射极 4) 集电极。

4. 参数特性: - 最大额定值: - 集-基电压(VCBO):180V - 集-射电压(VCEO):160V - 发-基电压(VEBO):6.0V - 集电极电流(Ic):1.0A - 功率耗散(PD):2.0W - 结温(TJ,Tstg):-65至+150°C - 热阻(θJA):62.5°C/W - 电气特性: - 集电极-基极漏电流(ICBO):在VCB=120V时,最大50nA - 发射极-基极电压(VBE(SAT)):在Ic=10mA时,最小1.00V - 集电极-发射极饱和电压(VCE(SAT)):在Ic=10mA时,最小0.15V - 直流电流增益(hFE):在VCE=5.0V, Ic=1.0mA时,最小80 - 截止频率(fT):在VcE=10V, Ic=10mA时,最小100MHz - 存储时间(Cob):在VcB=10V, f=1.0MHz时,最大15pF

5. 功能详解:CZT5551HC适用于需要高电压和高电流放大的应用场合,例如电源管理、电机控制和音频放大器。

6. 应用信息:适用于高电压和高电流放大应用,具体应用包括电源管理、电机控制和音频放大器。

7. 封装信息:SOT-223表面贴装封装,具体尺寸和机械轮廓图已在文档中提供。
CZT5551HC 价格&库存

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