CZT5551_10

CZT5551 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 180 160 6.0 600 2.0 -65 to +150 62.5 UNITS V V V mA W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) TEST CONDITIONS VCB=120V VCB=120V, TA=100°C VEB=4.0V IC=100μA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 180 160 6.0 0.15 0.20 1.00 1.00 MIN MAX 50 50 50 UNITS nA μA nA V V V V V V V R4 (1-March 2010) CZT5551 SURFACE MOUNT NPN SILICON TRANSISTOR SYMBOL hFE hFE hFE fT Cob Cib hfe NF ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VCE=5.0V, VCE=5.0V, IC=1.0mA IC=10mA 80 80 30 100 300 6.0 20 50 200 8.0 250 UNITS VCE=5.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200μA, RS=10Ω, f=10Hz to 15.7kHz MHz pF pF dB SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R4 (1-March 2010) w w w. c e n t r a l s e m i . c o m