CZT7090LE

CZT7090LE

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CZT7090LE - ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTOR - Central...

  • 详情介绍
  • 数据手册
  • 价格&库存
CZT7090LE 数据手册
CZT7090LE ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT7090LE is an Enhanced Specification Low VCE(SAT) PNP Silicon Power Transistor packaged in an industry standard SOT-223 case. High Collector Current, coupled with a Low Saturation Voltage, make this an excellent choice for industrial and consumer applications where electrical and thermal operational efficiency are top priorities. MARKING: FULL PART NUMBER SOT-223 CASE APPLICATIONS: • Power Management / DC-DC Converters • Portable and Battery Powered Products • LAN Equipment / Motor Controllers FEATURES: • Low VCE(SAT) PNP Transistor • High Current (IC=3.0A MAX) • VCE(SAT)=0.132V TYP @ IC=2.0A • SOT-223 Surface Mount Package • Complementary NPN device: CZT3090LE SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA 60 50 6.0 3.0 5.0 2.0 -65 to +150 62.5 UNITS V V V A A W °C °C/W ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage MAXIMUM RATINGS: (TA=25°C) Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ♦ ICBO ICBO ♦ IEBO ♦ BVCBO ♦ BVCEO ♦ BVEBO ♦ VCE(SAT) ♦ VCE(SAT) ♦ VCE(SAT) VBE(SAT) hFE hFE ♦ hFE hFE hFE Cob fT CHARACTERISTICS: (TA=25°C) TEST CONDITIONS VCB=50V VCB=50V, TA=100°C VEB=5.0V IC=100μA IC=10mA IE=100μA IC=500mA, IB=5.0mA IC=1.0A, IB=10mA IC=2.0A, IB=50mA IC=2.0A, IB=100mA VCE=2.0V, IC=10mA VCE=2.0V, IC=500mA VCE=2.0V, IC=1.0A VCE=2.0V, IC=2.0A VCE=2.0V, IC=3.0A VCB=10V, IE=0, f=1.0MHz VCE=5.0V, IC=50mA, f=50MHz MIN TYP MAX 50 10 50 60 50 6.0 76 124 132 0.888 363 314 281 228 177 175 250 300 1.0 800 UNITS nA µA nA V V V mV mV mV V 300 250 250 150 100 100 35 pF MHz ♦ Enhanced specification R1 (1-March 2010) CZT7090LE ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R1 (1-March 2010) w w w. c e n t r a l s e m i . c o m
CZT7090LE
物料型号: - 型号为CZT7090LE。

器件简介: - CZT7090LE是一款增强规格的表面贴装低VCE(SAT) PNP硅功率晶体管,采用行业标准的SOT-223封装。高集电极电流和低饱和电压使其成为工业和消费应用中电气和热操作效率的首选。

引脚分配: - 引脚代码:1) 基极 2) 集电极 3) 发射极 4) 集电极。

参数特性: - 最大额定值:包括集电极-基极电压、发射极-基极电压、连续集电极电流、峰值集电极电流、功率耗散、工作和存储结温度、集电极-发射极电压。 - 电气特性:包括集基漏电流(CBO)、集基反向击穿电压(BVCBO)、发射基击穿电压(BVEBO)、集射饱和电压(VCE(SAT))、基射饱和电压(VBE(SAT))、电流增益(hFE)、输出电容(Cob)、截止频率(fT)等。

功能详解: - 该晶体管适用于电源管理/DC-DC转换器、便携式和电池供电产品、局域网设备/电机控制器等应用。

应用信息: - 适用于需要高集电极电流和低饱和电压的应用,如电源管理、DC-DC转换器、便携式设备、电池供电产品、局域网设备和电机控制器。

封装信息: - 采用SOT-223表面贴装封装,具体尺寸和机械轮廓图已在文档中提供。
CZT7090LE 价格&库存

很抱歉,暂时无法提供与“CZT7090LE”相匹配的价格&库存,您可以联系我们找货

免费人工找货