CZTA46_10

CZTA46_10

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CZTA46_10 - SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CZTA46_10 数据手册
CZTA46 SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA46 type is a surface mount epoxy molded NPN silicon planar epitaxial transistors designed for extremely high voltage applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 450 450 6.0 500 2.0 -65 to +150 62.5 UNITS V V V mA W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob Cib VCB=400V VBE=4.0V IC=100µA IC=1.0mA IE=10µA IC=1.0mA, IB=0.1mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA, f=10MHz VCB=20V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz 0.15 40 50 45 25 20 108 110 95 35 450 450 6.0 610 490 8.7 MAX 100 100 UNITS nA nA V V V 0.20 0.30 0.50 1.0 200 V V V V MHz 7.0 130 pF pF R4 (1-March 2010) CZTA46 SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R4 (1-March 2010) w w w. c e n t r a l s e m i . c o m
CZTA46_10
1. 物料型号:CZTA46

2. 器件简介:CZTA46是由Central Semiconductor生产的表面贴装环氧模塑NPN硅平面外延晶体管,设计用于极高电压应用。

3. 引脚分配:SOT-223封装,引脚编号为1(基极),2(集电极),3(发射极),4(集电极)。

4. 参数特性: - 最大额定值: - 集电极-基极电压(VCBO):450V - 集电极-发射极电压(VCEO):450V - 发射极-基极电压(VEBO):6.0V - 连续集电极电流(IC):500mA - 功率耗散(PD):2.0W - 工作和存储结温(TJ, Tstg):-65至+150°C - 热阻(eJA):62.5°C/W - 电气特性: - CBO(VCB=400V):100nA - IEBO(VBE=4.0V):100nA - BVCBO(Ic=100μA):450V至610V - BVCEO(Ic=1.0mA):450V至490V - BVEBO(IE=10μA):6.0V至8.7V - VCE(SAT)(Ic=1.0mA, IB=0.1mA):0.20V - VCE(SAT)(Ic=10mA, IB=1.0mA):0.30V - VCE(SAT)(Ic=50mA, IB=5.0mA):0.50V - VBE(SAT)(Ic=10mA, Ig=1.0mA):1.0V - hFE(VCE=10V, Ic=1.0mA):40至108 - hFE(VCE=10V, Ic=10mA):50至110至200 - hFE(VCE=10V, Ic=50mA):45至95 - hFE(VCE=10V, Ic=100mA):25至35 - fT(VCE=10V, Ic=10mA, f=10MHz):20MHz - Cob(VcB=20V, IE=0, f=1.0MHz):7.0pF - Cib(VEB=0.5V, Ic=0, f=1.0MHz):130pF

5. 功能详解:CZTA46是一种用于极高电压应用的NPN硅晶体管,具有较高的电压承受能力和电流驱动能力。

6. 应用信息:适用于极高电压应用,如电源管理、电机控制等。

7. 封装信息:SOT-223表面贴装封装,具体尺寸和机械轮廓图已在文档中提供。
CZTA46_10 价格&库存

很抱歉,暂时无法提供与“CZTA46_10”相匹配的价格&库存,您可以联系我们找货

免费人工找货