CZTA94_10

CZTA94_10

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CZTA94_10 - SURFACE MOUNT HIGH VOLTAGE PNP SILICON TRANSISTOR - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CZTA94_10 数据手册
CZTA94 SURFACE MOUNT HIGH VOLTAGE PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTA94 type is a surface mount epoxy molded PNP silicon planar epitaxial transistors designed for extremely high voltage applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICES IEBO BVCBO BVCES BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob Cib SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 400 400 6.0 300 2.0 -65 to +150 62.5 UNITS V V V mA W °C °C/W CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=350V VCE=350V VBE=4.0V IC=100µA 400 IC=100µA 400 IC=1.0mA 400 IE=10µA 6.0 IC=1.0mA, IB=0.1mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA VCE=10V, IC=1.0mA 40 VCE=10V, IC=10mA 50 VCE=10V, IC=50mA 45 VCE=10V, IC=100mA 20 VCE=10V, IC=10mA, f=10MHz 20 VCB=20V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz MAX 100 500 100 0.40 0.50 0.75 0.75 200 UNITS nA nA nA V V V V V V V V 7.0 130 MHz pF pF R3 (1-March 2010) CZTA94 SURFACE MOUNT HIGH VOLTAGE PNP SILICON TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R3 (1-March 2010) w w w. c e n t r a l s e m i . c o m
CZTA94_10
物料型号: - 型号为CZTA94。

器件简介: - CZTA94是一种表面贴装的环氧模塑PNP硅平面外延晶体管,设计用于极高电压应用。

引脚分配: - 引脚代码:1) 基极,2) 集电极,3) 发射极,4) 集电极。

参数特性: - 最大额定值(TA=25°C): - 集电极-基极电压VCBO:400V - 集电极-发射极电压VCEO:400V - 发射极-基极电压VEBO:6.0mA时为300V - 功耗PD:-65到+150°C,2.0W - 存储结温Tstg:-65到+150°C - 热阻ΘJA:62.5°C/W

功能详解: - 电气特性(测试条件:A=25°C,除非另有说明): - 集电极电流ICBO:VCB=350V时为100nA - 集电极电流ICES:VCE=350V时为500nA - 发射极电流IEBO:VBE=4.0V时为100nA - 击穿电压BVCBO:IC=100µA时为400V - 击穿电压BVCES:BVCEO IC=100µA时为400V,IC=1.0mA时也为400V - 击穿电压BVEBO:IE=10µA时为6.0V - 饱和压降VCE(SAT):IC=10mA, IB=1.0mA时为0.40V;IC=1.0mA, IB=0.1mA时为0.50V;IC=50mA, IB=5.0mA时为0.75V - 基极-发射极饱和压降VBE(SAT):hFE在IC=10mA, IB=1.0mA时为0.75V;VCE=10V, IC=1.0mA时为40至200 - 截止频率fT:VCE=10V, IC=100mA时为20MHz;VCE=10V, IC=10mA, f=10MHz时也为20MHz - 电容Cob:VCB=20V, IE=0, f=1.0MHz时为7.0pF - 电容Cib:VEB=0.5V, IC=0, f=1.0MHz时为130pF

应用信息: - 适用于极高电压应用。

封装信息: - 封装类型为SOT-223,具体尺寸和机械轮廓在文档中有详细描述。
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