MPQ2222

MPQ2222 MPQ2222A NPN SILICON QUAD TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ2222 and MPQ2222A types are comprised of four independent NPN silicon transistors mounted in a 14-pin DIP, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (per transistor) Power Dissipation (total package) Operating and Storage Junction Temperature Thermal Resistance (total package) SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA MPQ2222 60 40 5.0 MPQ2222A 75 40 6.0 500 650 1.9 -65 to +150 66 UNITS V V V mA mW W °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C) MPQ2222 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V 50 ICBO VCB=60V IEBO VEB=3.0V 100 BVCBO IC=10μA 60 BVCEO IC=10mA 40 BVEBO IE=10μA 5.0 VCE(SAT) IC=150mA, IB=15mA 0.4 VCE(SAT) IC=300mA, IB=30mA 1.6 VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA 1.3 2.6 VBE(SAT) IC=300mA, IB=30mA VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA hFE VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=300mA 30 hFE VCE=10V, IC=500mA fT VCE=20V, IC=20mA, f=100MHz 200 Cob VCB=10V, IE=0, f=1.0MHz 8.0 Cib VEB=0.5V, IC=0, f=1.0MHz 30 tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA ts VCC=30V, IC=150mA, IB1=IB2=15mA - MPQ2222A MIN MAX 10 100 75 40 6.0 0.3 1.0 0.6 1.2 2.0 35 50 75 100 300 40 200 8.0 30 35 285 UNITS nA nA nA V V V V V V V V V MHz pF pF ns ns R2 (30-January 2012) MPQ2222 MPQ2222A NPN SILICON QUAD TRANSISTOR TO-116 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Collector Q1 2) Base Q1 3) Emitter Q1 4) No Connection 5) Emitter Q2 6) Base Q2 7) Collector Q2 8) Collector Q3 9) Base Q3 10) Emitter Q3 11) No Connection 12) Emitter Q4 13) Base Q4 14) Collector Q4 MARKING: FULL PART NUMBER R2 (30-January 2012) w w w. c e n t r a l s e m i . c o m