MPQ2906

MPQ2906 MPQ2907 PNP SILICON QUAD TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ2906, MPQ2907 types are comprised of four independent PNP silicon transistors mounted in a 14-pin DIP, designed for small signal, general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (per transistor) Power Dissipation (total package) Operating and Storage Junction Temperature ELECTRICAL SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) fT Cob Cib ton toff SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg UNITS V V V mA mW W °C 60 40 5.0 600 650 2.0 -65 to +150 CHARACTERISTICS PER TRANSISTOR: (TA=25°C) TEST CONDITIONS MIN TYP VCB=30V VEB=3.0V IC=10μA 60 IC=10mA 40 IE=10μA 5.0 IC=150mA, IB=15mA IC=300mA, IB=30mA IC=150mA, IB=15mA IC=300mA, IB=30mA VCE=20V, IC=50mA, f=100MHz 200 VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, IC=150mA, IB1=15mA 30 VCC=6.0V, IC=150mA, IB1=IB2=15mA 150 MPQ2906 MIN MAX 35 40 30 - MAX 50 50 0.4 1.6 1.3 2.6 8.0 30 UNITS nA nA V V V V V V V MHz pF pF ns ns hFE hFE hFE VCE=10V, VCE=10V, VCE=10V, IC=10mA IC=150mA IC=300mA MPQ2907 MIN MAX 75 100 50 - R1 (30-January 2012) MPQ2906 MPQ2907 PNP SILICON QUAD TRANSISTOR TO-116 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Collector Q1 2) Base Q1 3) Emitter Q1 4) No Connection 5) Emitter Q2 6) Base Q2 7) Collector Q2 8) Collector Q3 9) Base Q3 10) Emitter Q3 11) No Connection 12) Emitter Q4 13) Base Q4 14) Collector Q4 MARKING: FULL PART NUMBER R1 (30-January 2012) w w w. c e n t r a l s e m i . c o m