PN4209

PN4209 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN4209 is a PNP Silicon Transistor designed for high speed switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V mA mW °C °C/W 15 15 4.5 200 625 -65 to +150 200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES VCE=8.0V ICES VCE=8.0V, TA=125°C BVCBO IC=100μA 15 BVCES BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob Cib IC=100μA IC=3.0mA IE=100μA IC=1.0mA, IB=100μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=1.0mA, IB=100μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=0.5V, IC=1.0mA VCE=0.3V, IC=10mA VCE=0.3V, IC=10mA, TA=-55°C VCE=1.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=5.0V, IE=0 VBE=0.5V, IC=0 0.69 35 50 20 40 850 15 15 4.5 MAX 10 5.0 UNITS nA μA V V V V 0.15 0.18 0.60 0.80 0.86 1.5 120 V V V V V V MHz 7.0 7.0 pF pF R0 (1-December 2011) PN4209 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ton VCC=1.5V, IC=10mA, IB1=1.0mA 20 toff VCC=1.5V, IC=10mA, IB1=IB2=1.0mA 20 UNITS ns ns TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (1-December 2011) w w w. c e n t r a l s e m i . c o m