N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.
CEA6200
PRELIMINARY
D
D G SOT-89 D
G
S
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 60 Units V V A A W C
±20
1.8 7.2 1.3 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice . 1
Rev 1. 2007.June http://www.cetsemi.com
CEA6200
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.8A VDS = 27.5V, ID = 1.8A, VGS = 4.5V VDD = 27.5V, ID = 1.8A, VGS = 10V, RGEN = 3Ω 8 2.4 16.7 1.6 2.4 0.8 1.1 1.8 1.2 16 4.8 33.4 3.2 3.2 ns ns ns ns nC nC nC A V
d
TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Test Condition VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 1.8A VGS = 4.5V, ID = 1.4A 1 190 250 230 45 25 Min 60 1 100 -100 3 250 330 Typ Max Units V
µA
nA nA V mΩ mΩ pF pF pF
Ciss Coss Crss
VDS = 25V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CEA6200
20 VGS=10,9,8,7,6V 8
ID, Drain Current (A)
15
ID, Drain Current (A)
6
10
4 25 C 2 TJ=125 C -55 C
VGS=4V
5
VGS=3V
0 0 2 4 6 8 10 0
0
1
2
3
4
5
6
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
600 500 400 300 200 100 0 Crss 0 3 6 Coss 9 12 15 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=1.8A VGS=10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A)
VGS=0V
10
1
VTH, Normalized Gate-Source Threshold Voltage
ID=250µA
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEA6200
VGS, Gate to Source Voltage (V)
5 V =27.5V DS ID=1.8A 10
2
ID, Drain Current (A)
4 3 2 1 0
RDS(ON)Limit 10
1
10
0
1ms 10ms 1s DC
10
-1
0
0.5
1
1.5
2
2.5
10
-2
TA=25 C TJ=150 C Single Pulse 10
-2
10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2
10
-1
0.1 0.05 0.02 PDM t1 t2
10
-2
0.01
Single Pulse
10
-3
1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4