CEB01N6

CEP01N6/CEB01N6 CEI01N6/CEF01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 650V RDS(ON) 15Ω 15Ω 15Ω 15Ω ID 1A 1A 1A 1A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg f TO-220F Units V V 650 ±30 1 4 36 0.29 60 0.8 -55 to 150 1 4 e e A A W W/ C mJ A C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Repetitive Avalanche Current Operating and Store Temperature Range 28 0.22 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 3.5 62.5 Limit 4.5 65 Units C/W C/W Rev 1. 2005.December 1 http://www.cetsemi.com CEP01N6/CEB01N6 CEI01N6/CEF01N6 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forwand Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 0.8A VDS = 480V, ID = 0.8A, VGS = 10V VDD = 300V, ID = 0.4A, VGS = 10V, RGEN = 4.7Ω 19 13 24 35 6 1.0 4.4 0.8 1.6 38 26 48 70 8 ns ns ns ns nC nC nC A V gFS b Ciss Coss Crss VDS = 20V, ID = 0.4A VDS = 25V, VGS = 0V f = 1.0MHz 0.5 136 46 19 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 0.4A 2 12 4 15 V Ω BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 650 1 10 -10 V µA µA µA Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units 6 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L = 190mH, IAS = 0.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . 2 CEP01N6/CEB01N6 CEI01N6/CEF01N6 1.5 VGS=10,9,8V 2.5 25 C ID, Drain Current (A) VGS=6V 0.9 ID, Drain Current (A) 1.2 2.0 1.5 0.6 1.0 0.3 0.5 TJ=125 C 0.0 -55 C 4 5 6 7 VGS=5V 0.0 0 5 10 15 20 25 1 2 3 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 240 200 160 120 80 Coss 40 0 0 5 10 15 20 25 Crss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=0.4A VGS=10V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 0 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA IS, Source-drain current (A) 25 50 75 100 125 150 10 10 -1 10 -25 0 -2 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEP01N6/CEB01N6 CEI01N6/CEF01N6 VGS, Gate to Source Voltage (V) 10 VDS=480V ID=0.8A 10 1 ID, Drain Current (A) 8 RDS(ON)Limit 10 0 100µs 1ms 10ms DC 4 6 4 10 -1 2 0 0 1 2 3 4 5 6 10 -2 TC=25 C TJ=150 C Single Pulse 10 0 10 1 10 2 10 3 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 0.1 10 -1 PDM 0.05 0.02 0.01 t1 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -2 Single Pulse -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4-5