CEB01N65

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N65 CEB01N65 CEF01N65 VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V CEP01N65/CEB01N65 CEF01N65 PRELIMINARY Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D G G D S G CEP SERIES TO-220 S CEB SERIES TO-263(DD-PAK) G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg e TO-220F Units V V 650 ±30 1.3 5.2 41 0.33 -55 to 150 1.3 5.2 27 0.22 d d A A W W/ C C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 3 62.5 Limit 4.5 65 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2007.March http://www.cetsemi.com Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b CEP01N65/CEB01N65 CEF01N65 Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Test Condition VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 0.6A 2.5 8.5 Min 650 25 10 -10 4.5 10.5 Typ Max Units V µA 4 uA uA V Ω gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS f VSD VDS = 10V, ID = 0.6A VDS = 25V, VGS = 0V, f = 1.0 MHz 0.8 205 45 20 14.3 14.6 22.9 16.6 5.7 1.9 2.4 1.3 28.6 29.2 45.8 33.2 7.5 S pF pF pF ns ns ns ns nC nC nC A V VDD = 300V, ID = 1.3A, VGS = 10V, RGEN =4.7Ω VDS = 480V, ID = 1.3A, VGS = 10V Drain-Source Diode Characteristics and Maximun Ratings VGS = 0V, IS = 0.6A g 1.5 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 1A . g.Full package VSD test condition IS = 1A . 2 CEP01N65/CEB01N65 CEF01N65 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 VGS=10,8,7V 2.4 2.0 1.6 1.2 0.8 25 C 0.4 0 TJ=125 C 1 2 3 4 5 -55 C 6 7 ID, Drain Current (A) VGS=5V VGS=4V 4 8 12 16 20 24 ID, Drain Current (A) VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 300 250 200 150 100 50 0 Coss Crss 0 5 10 15 20 25 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=0.6A VGS=10V Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 0 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 -1 -25 0 25 50 75 100 125 150 10 -2 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEP01N65/CEB01N65 CEF01N65 VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=480V ID=1.3A 10 1 ID, Drain Current (A) RDS(ON)Limit 10 0 100ms 1ms 10ms DC 4 10 -1 0 1 2 3 4 5 6 10 -2 TC=25 C TJ=150 C Single Pulse 10 0 10 1 10 2 10 3 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4