CEP10N4/CEB10N4 CEI10N4/CEF10N4
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP10N4 CEB10N4 CEI10N4 CEF10N4 VDSS 450V 450V 450V 450V RDS(ON) 0.7Ω 0.7Ω 0.7Ω 0.7Ω ID 10A 10A 10A 10A e @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg
f
TO-220F
Units V V
450
±30
10 40 125 1.0 450 10 -55 to 150 10 40 45 0.36 450 10
e e
A A W W/ C mJ A C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.0 62.5 Limit 2.8 65 Units C/W C/W
2002.September 4 - 50
http://www.cetsemi.com
CEP10N4/CEB10N4 CEI10N4/CEF10N4
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
b c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD VGS = 0V, IS = 10A VDS = 320V, ID = 10A, VGS = 10V VDD = 200V, ID = 10A, VGS = 10V, RGEN = 9.1Ω Test Condition VGS = 0V, ID = 250µA VDS = 450V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6A VDS = 50V, ID = 6A 3 2 0.6 6 1400 330 120 14 27 50 24 48 4 15 10 2.0 75 125 100 60 65 Min 450 25 100 -100 100 500 -500 4 0.7 Typ Max Units V
µA
4
nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A V
VDS = 25V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =9.16mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 5.6A .
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CEP10N4/CEB10N4 CEI10N4/CEF10N4
6 VGS=10,8,7,6V 5 4 3 2 20 25 C
ID, Drain Current (A)
ID, Drain Current (A)
16
12 -55 C 8 TJ=125 C 4
VGS=5V
1 0 0 1 2 3 4 5 6
0 0 1 2 3 4 5
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1800 1500 1200 900 600 Coss 300 Crss 0 0 5 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=6A VGS=10V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
1
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250µA
IS, Source-drain current (A)
25 50 75 100 125 150
10
10
0
10 -25 0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
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CEP10N4/CEB10N4 CEI10N4/CEF10N4
VGS, Gate to Source Voltage (V)
15 V =320V DS ID=10A 10
2
ID, Drain Current (A)
12
4
RDS(ON)Limit 10
1
10µs 100µs 1ms 10ms DC
9
6
10
0
3
0 0 12 24 36 48
10
-1
TC=25 C TJ=150 C Single Pulse 10
0
10
1
10
2
10
3
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
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