N-Channel Enhancement Mode Field Effect Transistor FEATURES
40V, 140A, RDS(ON) = 3.6mΩ @VGS = 10V. RDS(ON) = 6.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP14G04/CEB14G04
D
D
G
G S CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 40
Units V V A A A W W/ C C
±20
140 97 560 100 0.8 -55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.5 50 Units C/W C/W
Details are subject to change without notice . 1
Rev 1. 2010.Dec http://www.cetsemi.com
CEP14G04/CEB14G04
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 70A VDS = 20V, ID = 20A, VGS = 10V VDD = 20V, ID = 20A, VGS = 10V, RGEN = 1.6Ω 21 12 83 19 50 10 24 70 1.3 42 24 166 38 65 ns ns ns ns nC nC nC A V VGS(th) RDS(on) Ciss Coss Crss VGS = VDS, ID = 250µA VGS = 10V, ID = 50A VGS = 4.5V, ID = 40A VDS = 20V, VGS = 0V, f = 1.0 MHz 1 3 5 3730 570 360 3 3.6 6.5 V mΩ mΩ pF pF pF BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 40 25 100 -100 V
µA
TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
nA nA
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CEP14G04/CEB14G04
60 50 40 30 20 10 0 VGS=10,9,8,4V 240 25 C
ID, Drain Current (A)
ID, Drain Current (A)
180
120
VGS=3V
60
TJ=125 C
-55 C
0
0.5
1
1.5
2
2.5
3
0
0
2
4
6
8
10
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
4800 4000 3200 2400 1600 800 0 Crss 0 5 10 15 20 25 Coss Ciss 2.6 2.2 1.8 1.4 1.0 0.6 0.2 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=50A VGS=10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A)
VGS=0V
VTH, Normalized Gate-Source Threshold Voltage
ID=250µA
10
1
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEP14G04/CEB14G04
VGS, Gate to Source Voltage (V)
10 V =20V DS ID=20A 10
3
RDS(ON)Limit
ID, Drain Current (A)
8 6 4 2 0
10
2
100ms 1ms 10ms
10
1
DC TC=25 C TJ=175 C Single Pulse 10
-1
0
10
20
30
40
50
60
10
0
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2
10
-2
1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve
4