CEP35P03/CEB35P03
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30
Units V V A A W W/ C C
±20
-35 -140 71 0.48 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.1 62.5 Units C/W C/W
Rev 2. 2005.May 1
http://www.cetsemi.com
CEP35P03/CEB35P03
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -2.3A VDS = -15V, ID = -20A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 10 4 58 23 20 3 5 -2.3 -1.2 20 10 80 30 25 ns ns ns ns nC nC nC A V
d
TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = -250µA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -20A VGS = -5V, ID = -16A VDS = -15V, ID = -20A -1 30 47 8 1300 300 150 Min -30 -1 100 -100 -3 36 57 Typ Max Units V
µA
nA nA V mΩ mΩ S pF pF pF
VDS = -15V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CEP35P03/CEB35P03
25 -VGS=10,8,6,5V 20 50 25 C
-ID, Drain Current (A)
-ID, Drain Current (A)
40
15
-VGS=4V
10
30
5
TJ=125 C -55 C
20
5
-VGS=3V
10
0 0.0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1800 1500 Ciss 1200 900 600 300 0 0 5 10 15 20 25 Coss Crss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=-20A VGS=-10V
C, Capacitance (pF)
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)
VGS=0V
2
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=-250µA
10
10
1
10 -25 0 25 50 75 100 125 150
0
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
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CEP35P03/CEB35P03
-VGS, Gate to Source Voltage (V)
10 V =-15V DS ID=-20A 8 10
3
-ID, Drain Current (A)
10
2
RDS(ON)Limit
6
100µs 1ms 10ms
4
10
1
DC TC=25 C TJ=175 C Single Pulse
-1
2
0 0 5 10 15 20
10
0
10
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
-VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
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