N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP4060A/CEB4060A
D
D
G
G S CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60
Units V V A A A W W/ C C
±20
17 12 68 47 0.4 -55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.2 50 Units C/W C/W
Details are subject to change without notice . 1
Rev 2. 2010.Sep http://www.cetsemi.com
CEP4060A/CEB4060A
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 7.5A 0.8 VDS = 48V, ID = 15A, VGS = 10V VDD = 30V, ID = 15A, VGS = 10V, RGEN = 25Ω 12.4 2 24 6 8.1 1.6 2.4 17 1.2 24.8 4 48 12 10.5 ns ns ns ns nC nC nC A V Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 410 115 20 pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 7.5A 2 2.7 68 4 85 V mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 60 25 100 -100 V
µA
Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
uA uA
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
2
CEP4060A/CEB4060A
30 25 20 15 10 5 0 VGS=4V 0 2 4 6 0 0 2 4 VGS=6V VGS=5V VGS=10,9,8,7V 30 24 18 12 6 TJ=125 C -55 C 3 4 5 25 C
ID, Drain Current (A)
ID, Drain Current (A)
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
600 500 400 300 200 100 0 Coss Crss 0 5 10 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=7.5A VGS=10V
Ciss
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
10
2
VTH, Normalized Gate-Source Threshold Voltage
IS, Source-drain current (A)
ID=250µA
10
1
10 -25 0 25 50 75 100 125 150
0
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEP4060A/CEB4060A
VGS, Gate to Source Voltage (V)
15 12 9 6 3 0 VDS=48V ID=15A RDS(ON)Limit 10µs 100ms 10
1
ID, Drain Current (A)
1ms 10ms DC
10
0
TC=25 C TJ=175 C Single Pulse 10
0
0
3
6
9
12
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2
10
-2
1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4
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